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HAT2160N-EL-E詳細(xì)規(guī)格: 類別：FET - 單; 描述：MOSFET N-CH 20V 60A LFPAKI; 系列：-; 制造商：Renesas Electronics America; FET型：MOSFET N 通道，金屬氧化物; FET特點：標(biāo)準(zhǔn); 漏極至源極電壓333Vdss444：20V; 電流_連續(xù)漏極333Id4440a025000C：60A; 開態(tài)Rds（最大）0a0IdwwwwVgs0a025000C：3.1 毫歐 @ 30A，10V; Id時的Vgs333th444（最大）：-; 閘電荷333Qg4440a0Vgs：50nC @ 10V; 輸入電容333Ciss4440a0Vds：7600pF @ 10V; 功率_最大：-; 安裝類型：表面貼裝; 封裝/外殼：8-PowerSOIC（0.156"，3.95mm）; 供應(yīng)商設(shè)備封裝：8-LFPAK-iV; 包裝：帶卷 (TR)

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